Design, Modeling, and Characterization of Power MOSFET in 4H-SiC for Extreme Environment Applications

Silicon Carbide (SiC) is an emerging technology for extreme environment electronics applications. In this paper, an analytical model for vertical DIMOS transistor structure in SiC is presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. A good agreement between the analytical model and the MEDICI simulation is demonstrated. A rigorous testing and characterization has been carried out on a 4H-SiC DIMOS transistor test device. Device performance at higher temperatures is investigated. A large change in drain currents and threshold voltage are observed.